2007 | 2006 | 2005 | 2004 | 2003 | 2002 | 2001 |
2007
Changwoong Chu, J. A. Ayres, D. M. Stefanescu, B. R. Walker, Christopher B. Gorman and Gregory N. Parsons, "Enhanced conduction through isocyanide terminal groups in alkane and biphenylene molecules measured in molecule/nanoparticle/molecule junctions" Journal of Physical Chemistry C (2007).
Kie Jin Park, David B. Terry, S. Michael Stewart and Gregory N. Parsons, "In-Situ Auger Electron Spectroscopy Study of Growth Initiation and Interface Formation Reactions during Atomic Layer Deposition of Ruthenium on Si-H, SiO2, and HfO2 Surfaces" Langmuir (2007)
Qing Peng, XY Sun, JC Spagnola, GK Hyde, RJ Spontak, and G.N. Parsons, “Atomic layer deposition on electrospun polymer fibers as a direct route to Al2O3 microtubes with precise wall thickness control” Nano Letters 7 (3): 719-722 (2007).
Jeong-Seok Na, Jennifer Ayres, Changwoong Chu, Christopher B. Gorman, and Gregory N. Parsons, “Conduction Mechanisms and Stability of Single Molecule Nanoparticle/Molecule/Nanoparticle Junctions” Nanotechnology 18 (3) #035203 (2007)
Changwoong Chu and Gregory N. Parsons, “Conductance in Alklyamine/Au and Alkanethiol/Au Molecular Junctions Measured in Molecule/Nanoparticle/Molecule Bridges and Conducting Probe Structures” Journal of the American Chemical Society 129 (8): 2287-2296 (2007).
G.N. Parsons “Engineering Challenges in Molecular Electronics” in The Handbook of Nanoscience, Engineering, and Technology, Volume II, Goddard, Brenner, Lyshevski, Iafrate, editors, CRC Press (2007).
2006
C.M. Osburn, S.A. Campbell, A. Demkov, E. Eisenbraun, E. Garfunkel, T. Gustafsson, A.I. Kingon, J. Lee, D.J. Lichtenwalner, G. Lucovsky, T.P. Ma, J.P. Maria, V. Misra, R.J. Nemanich, G.N. Parsons, D.G. Schlom, S. Stemmer, R.M. Wallace, and J. Whitten “Materials and Processes for High k Gate Stacks: Results from the FEP Transition Center” ECS Transactions, 3 (3), 389 (2006).
K.J. Park, and G.N. Parsons “Selective Area Atomic Layer Deposition of Rhodium and Effective Work Function Characterization in Capacitor Structures”Applied Physics Letters 89, #043111 (2006).
Theodosia Gougousi, David B. Terry, and Gregory N. Parsons “Charge generation during oxidation of thin Hf metal films on silicon” Thin Solid Films 513 201-205 (2006).
Changwoong Chu and Gregory N. Parsons, “Solvent-Enhanced Resist Flow for Room Temperature Imprint Lithography” Journal of Vacuum Science and Technology B 24, 818-822 (2006).
Dipak Barua, Theodosia Gougousi, Erin D. Young, and Gregory N. Parsons “Supercritical-Carbon-Dioxide-Assisted Cyclic Deposition of Metal Oxide and Metal Thin Films”, Applied Physics Letters 88, 092904 (2006).
2005
M. J. Kelly, J.H.Han, C.B.Musgrave, and G. N. Parsons, "In-situ infrared spectroscopy and density functional theory modeling of hafnium alkylamine adsorption on Si-OH and Si-H surfaces", Chemistry of Materials 17, 5305-5314 (2005).
T. Gougousi, D. Barua, E. D. Young, and G. N. Parsons, "Metal-oxide thin films deposited from metal organic precursors in supercritical CO2 solutions." Chemistry of Materials, 17, 5093-5100 (2005)
K. J. Park, J. M. Doub, T. Gougousi, and G. N. Parsons, "Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition", Applied Physics Letters 86 051903(2005).
2004
G.N. Parsons “Designing interface composition and structure in high dielectric constant gate stacks” in High-K Gate Dielectric Materials for VLSI MOSFET Applications, Huff and Gilmer, editors (2004).
K. J. Park and G. N. Parsons, "Bulk and interface charge in low temperature silicon nitride for thin film transistors on plastic substrates", Journal of Vacuum Science & Technology A 22, 2256-2260 (2004).
D. Niu, R. W. Ashcraft, C. Hinkle, and G. N. Parsons, "Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics", Journal of Vacuum Science & Technology A 22, 445-451 (2004).
T. Gougousi and G. N. Parsons, "Postdeposition reactivity of sputter-deposited high-dielectric-constant films with ambient H2O and carbon-containing species", Journal of Applied Physics 95, 1391-1396 (2004).
2003
G.N. Parsons “Engineering Challenges in Molecular Electronics”, in The Handbook of Nanoscience, Engineering, and Technology, Goddard, Brenner, Lyshevski, Iafrate, editors, CRC Press (2003).
M. D. Ulrich, J. E. Rowe, D. Niu, and G. N. Parsons, "Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications", Journal of Vacuum Science & Technology B 21, 1792-1797 (2003).
D. Niu, R. W. Ashcraft, Z. Chen, S. Stemmer, and G. N. Parsons, "Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon", Journal of the Electrochemical Society 150, F102-F109 (2003).
T. Gougousi, M. J. Kelly, D. B. Terry, and G. N. Parsons, "Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon", Journal of Applied Physics 93, 1691-1696 (2003).
T. Gougousi, D. Niu, R. W. Ashcraft, and G. N. Parsons, "Carbonate formation during post-deposition ambient exposure of high-k dielectrics", Applied Physics Letters 83, 3543-3545 (2003).
2002
V. Misra, G. Lucovsky, and G. Parsons, "Issues in high-k gate stack interfaces", MRS Bulletin 27, 212-216 (2002).
S. Stemmer, D. O. Klenov, Z. Q. Chen, D. Niu, R. W. Ashcraft, and G. N. Parsons, "Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers", Applied Physics Letters 81, 712-714 (2002).
D. Niu, R. W. Ashcraft, M. J. Kelly, J. J. Chambers, T. M. Klein, and G. N. Parsons, "Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications", Journal of Applied Physics 91, 6173-6180 (2002).
D. Niu, R. W. Ashcraft, and G. N. Parsons, "Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon", Applied Physics Letters 80, 3575-3577 (2002).
D. Niu, R. W. Ashcraft, Z. Chen, S. Stemmer, and G. N. Parsons, "Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon", Applied Physics Letters 81, 676-678 (2002).
A. Gupta, H. Yang, and G. N. Parsons, "Ab initio analysis of silyl precursor physisorption and hydrogen abstraction during low temperature silicon deposition", Surface Science 496, 307-317 (2002).
T. Gougousi, M. J. Kelly, and G. N. Parsons, "The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions", Applied Physics Letters 80, 4419-4421 (2002).
K. R. Bray and G. N. Parsons, "Surface transport kinetics in low-temperature silicon deposition determined from topography evolution", Physical Review B 65 (2002).
K. R. Bray, A. Gupta, and G. N. Parsons, "Effect of hydrogen on adsorbed precursor diffusion kinetics during hydrogenated amorphous silicon deposition", Applied Physics Letters 80, 2356-2358 (2002).
2001
J. J. Chambers and G. N. Parsons, "Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon", Journal of Applied Physics 90, 918-933 (2001).
J. J. Chambers, B. W. Busch, W. H. Schulte, T. Gustafsson, E. Garfunkel, S. Wang, D. M. Maher, T. M. Klein, and G. N. Parsons, "Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon", Applied Surface Science 181, 78-93 (2001).
